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New Process & Technology

Miniaturization
High Density
Improved Thermal / Electrical Performance
Lead Free Implementation
MSL Improvement

Lead Free Implementation

Standard NiPdAu
Thin NiPdAu
Micro NiPdAu
Advanced Micro NiPdAu
RT/RT2 Advanced Micro NiPdAu
4 Layer PPF

RT/RT2 Advanced Micro NiPdAu

  • Samsung Licensed Patented RT/RT2 Advanced Micro NiPdAu plating process.
  • Excellent MSL performance (even with low cost BOM).
  • Epoxy bleed can be controlled with anti-ebo.
  • Excellent die shear performance.
  • No difference in bondability.
  • Excellent solderability.
RT Advanced Micro NiPdAu
(Samsung RT Upgrade µ-PPF Technology)
Au-Ag
0.8µ"
(Au : 30 - 70%)
Pd
0.5µ"
Ni
20µ"
Top side (Treated)
Lead Frame

Bottom side (Non-treated)

RT2 Advanced Micro NiPdAu
(Samsung RT2 Upgrade µ-PPF Technology)
Au-Ag
0.6µ"
(Au : 60% min)
Pd
0.5µ"
Ni
20µ"
Top side (Treated)
Lead Frame

Bottom side (Non-treated)


  • Utilizing Ni roughening process for better mold compound adhesion.
  • Enhanced plating finishing for better MTBA during Cu wire bonding.